Nanoimplantation is a technique commonly used in the semiconductor industry. It enables the manipulation of material properties and behaviors by introducing a wide array of defects and dopants into materials at the nanoscale.

The approach involves extracting atomic species from a source material via thermal or electrostatic means, and then these ions are accelerated toward a solid target material. During impact, the energized ions will displace atoms in the target material and create defects, such as vacancies and interstitials, or embed themselves in the target material as dopants. The size, distribution, and type of defects generated can be tailored by precisely controlling the ion beam parameters, such as energy and dosage.